2N6284_06 Datasheet, PDF (5/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

2N6283 2N6284 2N6286 2N6287
NPN
2N6284
PNP
2N6287
20,000
10,000
7000
5000
3000
2000
V_CE = 3.0 V
T_J = 150°C
25°C
30,000
20,000
10,000
7000
5000
3000
V_CE = 3.0 V
T_J = 150°C
25°C
2000
1000
−55 °C
700
−55 °C
1000
500
700
300
500
200
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0
3.0
T_J = 25°C
2.6
I_C = 5.0 A
10 A
15 A
2.6
I_C = 5.0 A
10 A
2.2
2.2
T_J = 25°C
15 A
1.8
1.8
1.4
1.4
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_B, BASE CURRENT (mA)
I_B, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20 30 50
3.0
T_J = 25°C
2.5
3.0
T_J = 25°C
2.5
2.0
2.0
V_BE(sat) @ I_C/I_B = 250
1.5
1.5 VBE(sat) @ IC/IB = 250
1.0
V_BE @ V_CE = 3.0 V
0.5
0.2 0.3 0.5 0.7 1.0
V_CE(sat) @ I_C/I_B = 250
2.0 3.0 5.0 7.0 10
20
1.0
V_BE @ V_CE = 3.0 V
0.5
0.2 0.3 0.5 0.7 1.0
V_CE(sat) @ I_C/I_B = 250
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
http://onsemi.com
5