2N6284_06 Datasheet, PDF (4/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

2N6283 2N6284 2N6286 2N6287
ACTIVE−REGION SAFE OPERATING AREA
50
0.1 ms
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
dc
1.0 T_J = 200°C
0.5
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T_C = 25°C
SINGLE PULSE
5.0 10 20
50 100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6284, 2N6287
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T_J(pk) = 200_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk) <
200_C. T_J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
5000
2000
1000
500
200
100
50
20
10
1.0
T_J = 25°C
V_CE = 3.0 Vdc
I_C = 10 A
2N6284 (NPN)
2N6287 (PNP)
2.0 5.0 10
20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Small−Signal Current Gain
1000
700
500
300
200
100
0.1 0.2
T_J = 25°C
C_ib
C_ob
2N6284 (NPN)
2N6287 (PNP)
0.5 1.0 2.0 5.0 10 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
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