NSS20101J_13 Datasheet, PDF (5/6 Pages) ON Semiconductor – NPN Transistor

NSS20101J, NSV20101J
TYPICAL CHARACTERISTICS
1
I_C = 2 A
I_C = 1 A
I_C = 0.5 A
0.1
I_C = 0.1 A
I_C = 50 mA
0.01
0.0001
0.001
0.01
0.1
I_B, BASE CURRENT (A)
Figure 9. Saturation Region
60
50
T_J = 25°C
f_TEST = 1 MHz
40
30
20
10
0
1
0
1
2
3
4
5
6
7
8
V_EB, BASE EMITTER VOLTAGE (V)
Figure 10. Input Capacitance
12
400
10
T_J = 25°C
f_TEST = 1 MHz
350
T_J = 25°C
f_TEST = 1 MHz
300
V_CE = 2 V
8
250
6
200
150
4
100
2
50
0
0
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
V_CB, COLLECTOR−BASE VOLTAGE (V)
Figure 11. Output Capacitance
I_C, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
10
T_J = 25°C
100 ms 10 ms 1 ms 0.5 ms
1
Thermal Limit
0.1
0.01
0.1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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