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| NSS20101J_13 Datasheet, PDF (3/6 Pages) ON Semiconductor – NPN Transistor | |||
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NSS20101J, NSV20101J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector âBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
EmitterâBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc)
V(BR)CEO
20
V(BR)CBO
40
V(BR)EBO
6.0
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 100 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
Collector âEmitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.5 mA)
(IC = 0.10 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.1 A)
Base âEmitter Saturation Voltage (Note 3)
(IC = 0.5 A, IB = 50 mA)
Base âEmitter Turnâon Voltage (Note 3)
(IC = 0.5 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 2.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 4.0 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%.
hFE
200
200
150
100
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Typ
Max
Unit
Vdc
Vdc
Vdc
mAdc
0.1
mAdc
0.1
500
V
0.015
0.040
0.115
0.220
V
1.1
V
0.90
MHz
350
40
pF
6
pF
TYPICAL CHARACTERISTICS
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
Note 1
Note 2
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Power Derating
600
500
400
300
200
100
0
0.001
150°C
25°C
â55°C
VCE = 2 V
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
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