NSS20101J_13 Datasheet, PDF (4/6 Pages) ON Semiconductor – NPN Transistor

NSS20101J, NSV20101J
TYPICAL CHARACTERISTICS
600
500
400
300
200
100
0
0.001
150°C
25°C
1
V_CE = 4 V
0.1
25°C
150°C
−55°C
−55°C
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.01
0.001
10
0.001
0.01
0.1
I_C/I_B = 10
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1
I_C/I_B = 20
0.1
25°C
150°C
−55°C
0.01
0.001
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.4
I_C/I_B = 10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
1.4
I_C/I_B = 50
1.2
1.6
V_CE = 2 V
1.4
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.2
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
I_C, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter Voltage
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