NSS20101J_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – NPN Transistor

NSS20101J, NSV20101J
MAXIMUM RATINGS (T_A = 25°C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
Rating
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
ESD
Max
Unit
20
Vdc
40
Vdc
6.0
Vdc
1.0
A
2.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
255
2.0
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
490
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
415
°C/W
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm², 1 oz. copper traces.
2. FR−4 @ 500 mm², 1 oz. copper traces.
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2