NSM80101MT1G Datasheet, PDF (5/6 Pages) ON Semiconductor – NPN Transistor with Dual Series Switching Diode

NSM80101MT1G
TYPICAL CHARACTERISTICS
1000
100
100
T_A = 150°C
T_A = 125°C
10
T_A = 85°C
T_A = 55°C
1 ^{TA = 25°C}
T_A = −40°C
0.1
0
T_A = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V_F, FORWARD VOLTAGE (V)
Figure 12. Forward Voltage
10
1.0
0.1
0.01
0.001
0
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 55°C
T_A = 25°C
10
20
30
40
50
60 70
V_R, REVERSE VOLTAGE (V)
Figure 13. Leakage Current
0.61
100
0.59
0.57
75
0.55
0.53
50
0.51
0.49
25
0.47
0.45
0
1
2
3
4
5
6
7
8
V_R, REVERSE VOLTAGE (V)
Figure 14. Capacitance
0
0
25
50
75 100 125 150 175
T_A, DERATED AMBIENT TEMPERATURE (°C)
Figure 15. Diode Power Dissipation Curve
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