NSM80101MT1G Datasheet, PDF (3/6 Pages) ON Semiconductor – NPN Transistor with Dual Series Switching Diode

NSM80101MT1G
TYPICAL CHARACTERISTICS
300
V_CE = 2.0 V
200 ^TJ ^{= 25°C}
100
70
50
30
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 1. Current−Gain — Bandwidth Product
80
60
T_J = 25°C
40
C_ibo
20
10
8.0
6.0
4.0
0.1 0.2
C_obo
0.5 1.0 2.0 5.0 10 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
50 100
1.0 k
700
500
t_s
300
200
100
70
50
30
V_CC = 40 V
I_C/I_B = 10
20 I_B1 = I_B2
T_J = 25°C
10
5.0 7.0 10
t_d @ V_BE(off) = 0.5 V
20 30 50 70 100
t_f
t_r
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 3. Switching Time
400
T_J = 125°C
200
25°C
-55°C
100
80
60
V_CE = 1.0 V
40
0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
1
I_C/I_B = 10
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.0 ^{IC/IB = 10}
0.9
0.8 ^{−55°C}
0.7
25°C
0.6
0.5
0.4
0.3 ^150°C
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
http://onsemi.com
3