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NSM80101MT1G Datasheet, PDF (2/6 Pages) ON Semiconductor – NPN Transistor with Dual Series Switching Diode
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NSM80101MT1G
Q1: NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 3)
V(BR)CEO
V
(IC = 1.0 mA, IB = 0)
80
−
V(BR)EBO
V
(IE = 100 mA, IC = 0)
6.0
−
(VCE = 60 V, IB = 0)
ICES
mA
−
0.1
(VCB = 80 V, IE = 0)
ICBO
mA
−
0.1
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
SMALL−SIGNAL CHARACTERISTICS
hFE
−
(IC = 10 mA, VCE = 1.0 V)
120
−
VCE(sat)
V
(IC = 100 mA, IB = 10 mA)
−
0.3
VBE(sat)
V
(IC = 10 mA, VCE = 5.0 Vdc)
−
1.2
Current −Gain − Bandwidth Product
fT
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
MHz
150
−
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V(BR)
75
−
V
Reverse Voltage Leakage Current
IR
(VR = 75 V)
(VR = 20 V, TJ = 150°C)
(VR = 75 V, TJ = 150°C)
mA
−
1.0
−
30
−
100
Diode Capacitance
CD
(VR = 0 V, f = 1.0 MHz)
pF
−
2.0
Forward Voltage
VF
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
mV
−
715
−
855
−
1000
−
1250
Reverse Recovery Time
trr
(IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W)
ns
−
6.0
Forward Recovery Voltage
VFR
(IF = 10 mA, tr = 20 ns)
V
−
1.75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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