NSM80101MT1G Datasheet, PDF (4/6 Pages) ON Semiconductor – NPN Transistor with Dual Series Switching Diode

NSM80101MT1G
TYPICAL CHARACTERISTICS
1.2
1.1 V_CE = 1 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 7. Base Emitter Voltage vs. Collector
Current
1.0
0.8
I_C =
50 mA
0.6
I_C =
100 mA
T_J = 25°C
I_C =
250 mA
I_C =
500 mA
0.4
I_C =
0.2 ^{10 mA}
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I_B, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
-0.8
1
1S
1 mS
-1.2
100 mS
0.1
10 mS
-1.6
-2.0
R_qVB for V_BE
-2.4
Thermal Limit
0.01
-2.8
0.001
0.5 1.0 2.0 5.0 10 20 50 100 200 500
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Base−Emitter Temperature
Coefficient
Figure 10. Safe Operating Area
400
300
200
100
0
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 11. Operating Temperature Derating
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