NSM3005NZ Datasheet, PDF (5/6 Pages) ON Semiconductor – N-Channel MOSFET Small Signal BJT and MOSFET

NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
30
25
20 _Ciss
15
V_GS = 0 V
T_J = 25°C
f = 1 MHz
10
C_oss
5
C_rss
0
0 2 4 6 8 10 12 14 16 18 20
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Capacitance Variation
1000
100
t_d(off)
t_f
V_GS = 4.5 V
V_DD = 15 V
t_r
t_d(on)
5
18
Q_T
4
V_DS
3
15
V_GS
12
9
2
Q_GS
1
Q_GD
6
V_DS = 15 V
T_J = 25°C
3
I_D = 0.2 A
0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Q_G, TOTAL GATE CHARGE (nC)
Figure 14. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
T_J = 25°C
T_J = 125°C
1
T_J = −55°C
0.1
10
1
10
100
R_G, GATE RESISTANCE (W)
Figure 15. Resistive Switching Time Variation
vs. Gate Resistance
0.85
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 16. Diode Forward Voltage vs. Current
0.75
I_D = 250 mA
0.65
0.55
0.45
0.35
−50 −25 0
25 50 75 100 125 150
T_J, TEMPERATURE (°C)
Figure 17. Threshold Voltage
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