NSM3005NZ Datasheet, PDF (4/6 Pages) ON Semiconductor – N-Channel MOSFET Small Signal BJT and MOSFET

NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
1.0
3.0 V
0.9
3.5 V
0.8
4.0 V
0.7
4.5 V
0.6
V_GS = 2.5 V
2.0 V
1.8 V
0.5
0.4
1.5 V
0.3
0.2
1.2 V
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. On−Region Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
V_DS = 5 V
T_J = −55°C
T_J = 25°C
T_J = 125°C
0.5
1.0
1.5
2.0
2.5 3.0
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Transfer Characteristics
5.0
4.5
T_J = 25°C
4.0
I_D = 0.1 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS, GATE VOLTAGE (V)
Figure 9. On−Resistance vs. Gate−to−Source
Voltage
1.8
1.7
V_GS = 4.5 V
1.6
I_D = 100 mA
1.5
1.4
1.3
V_GS = 1.8 V
I_D = 20 mA
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 11. On−Resistance Variation with
Temperature
5.0
4.5
T_J = 25°C
4.0
3.5
V_GS = 1.5 V
3.0
2.5
V_GS = 1.8 V
2.0
1.5
V_GS = 2.5 V
1.0
0.5
0
0
V_GS = 4.5 V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I_D, DRAIN CURRENT (A)
Figure 10. On−Resistance vs. Drain Current
and Gate Voltage
1000
T_J = 125°C
100
T_J = 85°C
10
1
2 4 6 8 10 12 14 16 18 20
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
4