NSM3005NZ Datasheet, PDF (2/6 Pages) ON Semiconductor – N-Channel MOSFET Small Signal BJT and MOSFET

NSM3005NZ
Q1 ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
V_(BR)CBO
I_C = 100 mA
40
Collector–Emitter Breakdown Voltage
V_(BR)CEO
I_C = 10 mA
30
Emitter–Base Breakdown Voltage
V_(BR)EBO
I_E = 100 mA
5.0
Collector Cutoff Current
I_CBO
V_CB = 25 V, I_E = 0 A
−
Emitter Cutoff Current
I_EBO
V_EB = 5.0 V, I_C = 0 A
−
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter Turn–On Voltage
h_FE
V_CE = 3.0 V, I_C = 30 mA
20
V_CE = 3.0 V, I_C = 100 mA
20
V_CE = 3.0 V, I_C = 500 mA
20
V_CE(sat)
I_C = 500 mA, I_B = 50 mA
−
V_BE(sat)
I_C = 500 mA, I_B = 50 mA
−
V_BE(on)
V_CE = 1.0 V, I_C = 500 mA
−
Q2 ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
20
V_(BR)DSS/T_J
I_D = −250 µA, ref to 25°C
−
Zero Gate Votlage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
I_DSS
I_GSS
V_GS = 0 V, V_DS = 16 V, T_J = 25°C
−
V_DS = 0 V, V_GS = ±8.0 V
−
Gate Threshold Voltage
V_GS(TH)
V_GS = V_DS, I_D = 250 mA
0.4
Negative Threshold Temperature Coefficient V_GS(TH)/T_J
−
−
Drain−to−Source On Resistance
R_DS(ON)
V_GS = 4.5 V, I_D = 100 mA
−
V_GS = 2.5 V, I_D = 50 mA
−
V_GS = 1.8 V, I_D = 20 mA
−
V_GS = 1.5 V, I_D = 10 mA
Forward Transconductance
g_FS
V_DS = 5.0 V, I_D = 100 mA
−
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
C_ISS
f = 1.0 MHz, V_GS = 0 V,
−
C_OSS
V_DS = 15 V
−
Reverse Transfer Capacitance
C_RSS
−
Total Gate Charge
Threshold Gate Charge
Q_G(TOT)
V_GS = 4.5 V, V_DS = 15 V;
−
Q_G(TH)
I_D = 200 mA
−
Gate−to−Source Charge
Q_GS
−
Gate−to−Drain Charge
Q_GD
−
SWITCHING CHARACTERISTICS, V_GS = 4.5 V (Note 3)
Turn−On Delay Time
Rise Time
t_d(ON)
V_GS = 4.5 V, V_DD = 15 V,
−
t_r
I_D = 200 mA, R_G = 2 W
−
Turn−Off Delay Time
T_d(ON)
−
Fall Time
t_f
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V_SD
V_GS = 0 V, I_S = 10 mA
−
2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Typ
−
−
−
−
−
−
−
−
−
−
−
Typ
−
19
−
−
−
1.9
0.65
0.9
1.1
1.4
0.56
15.8
3.5
2.4
0.70
0.05
0.14
0.10
18
35
201
110
0.55
Max Unit
−
V
−
V
−
V
1.0
mA
10
mA
100
100
100
0.4
V
1.1
V
1.0
V
Max Unit
−
V
−
mV/°C
1.0
mA
±2.0
mA
1.0
V
−
mV/°C
1.4
W
1.9
2.2
4.3
−
S
−
pF
−
−
−
nC
−
−
−
−
ns
−
−
−
1.0
V
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