NSM3005NZ Datasheet, PDF (3/6 Pages) ON Semiconductor – N-Channel MOSFET Small Signal BJT and MOSFET

NSM3005NZ
TYPICAL CHARACTERISTICS − Q1
1000
1
I_C/I_B = 10
T_J = 150°C
10
T_J = 25°C
T_J = −55°C
0.1
T_J = 150°C
T_J = 25°C
1
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 1. PNP DC Current Gain vs. Collector
Current
1.1
1.0 ^{IC/IB = 10}
0.9
0.8 _{TJ = −55°C}
0.7
0.6 ^TJ ^{= 25°C}
0.5
0.4 _{TJ = 150°C}
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. PNP VBE(sat) vs. IC
1000
T_J = −55°C
0.01
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 2. PNP VCE vs. IC
1000
1.0
0.9
T_J = −55°C
0.8
0.7 _{TJ = 25°C}
0.6
0.5
T_J = 150°C
0.4
0.3
0.2
1
V_CE = 1 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 4. PNP VBE(on) vs. IC
1000
1.0
1000
0.9
0.8
0.7
C_ibo
100
0.6
0.5
C_obo
0.4
0.3
10
0.2
500 mA
I_C = 1.0 mA 10 mA
100 mA
0.1
0
300 mA
1
0.01
0.1
1
10
100
0.1
1
10
100
I_B, BASE CURRENT (mA)
V_R, REVERSE VOLTAGE (V)
Figure 5. PNP VCE vs. IB
Figure 6. PNP Capacitance
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