NSBC114TDXV6T1G Datasheet, PDF (5/8 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors

1
I_C/I_B = 10
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
TYPICAL CHARACTERISTICS − NSBC114TF3
1000
150°C ^25°C
25°C
0.1
150°C
−55°C
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
100
10
1
50
1
−55°C
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
I_E = 0 A
T_A = 25°C
100
150°C
10
1
25°C
−55°C
0.1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
0.01
V_O = 5 V
0.001
50
0
1
2
3
4
5
6
7
V_in, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
150°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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