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NSBC114TDXV6T1G Datasheet, PDF (3/8 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors
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MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
0.9
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Collector−Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE
160
350
−
Collector−Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
−
−
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
−
0.6
−
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
−
1.4
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
−
−
Input Resistor
R1
7.0
10
13
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
R1/R2
−
−
−
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
250
200
(1) (2) (3)
150
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. copper trace
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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