NSBC114TDXV6T1G Datasheet, PDF (2/8 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5215DW1 (SOT−363) One Junction Heated
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
MUN5215DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R_qJL
Junction and Storage Temperature Range
NSBC114TDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
T_A = 25°C
Derate above 25°C
(Note 1)
(Note 1)
T_J, T_stg
P_D
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
NSBC114TDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
Junction and Storage Temperature Range
NSBC114TDP6 (SOT−963) One Junction Heated
Total Device Dissipation
T_A = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
T_J, T_stg
P_D
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
R_qJA
NSBC114TDP6 (SOT−963) Both Junction Heated (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
R_qJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm², 1 oz. copper traces, still air.
5. FR−4 @ 500 mm², 1 oz. copper traces, still air.
T_J, T_stg
Max
Unit
187
mW
256
1.5
mW/°C
2.0
670
°C/W
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
357
mW
2.9
mW/°C
°C/W
350
500
4.0
250
−55 to +150
mW
mW/°C
°C/W
°C
231
mW
269
1.9
mW/°C
2.2
540
°C/W
464
339
408
2.7
3.3
369
306
−55 to +150
mW
mW/°C
°C/W
°C
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