MUN5311DW1T1G_09 Datasheet, PDF (5/34 Pages) ON Semiconductor – Dual Bias Resistor Transistors

MUN5311DW1T1G Series
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted, common for Q₁ and Q₂, − minus sign for Q₁ (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
Input Resistor
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
R1
7.0
10
13
kW
15.4
22
28.6
32.9
47
61.1
7.0
10
13
7.0
10
13
3.3
4.7
6.1
0.7
1.0
1.3
1.5
2.2
2.9
3.3
4.7
6.1
3.3
4.7
6.1
15.4
22
28.6
1.54
2.2
2.86
Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G/MUN5316DW1T1G
MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.0
0.21
−
1.0
0.1
0.47
0.047
1.2
0.25
−
1.2
0.185
0.56
0.056
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL MUN5311DW1T1G SERIES DEVICES
300
250
200
150
100
50
R_qJA = 490°C/W
0
− 50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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