MUN5311DW1T1G_09 Datasheet, PDF (14/34 Pages) ON Semiconductor – Dual Bias Resistor Transistors

MUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G NPN TRANSISTOR
1
I_C/I_B = 10
0.1
−25°C
25°C
0.01
1000
75°C
T_A = −25°C
100
10
75°C
V_CE = 10 V
25°C
0.001
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 42. V_CE(sat) versus I_C
1
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 43. DC Current Gain
12
f = 1 MHz
10
I_E = 0 V
T_A = 25°C
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 44. Output Capacitance
100
75°C
10
1
25°C
0.1
T_A = −25°C
0.01
V_O = 5 V
0.001
01
234567 8
V_in, INPUT VOLTAGE (VOLTS)
9 10
Figure 45. Output Current versus Input Voltage
10
T_A = −25°C
1
75°C
25°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
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