MUN5311DW1T1G_09 Datasheet, PDF(3/34 Page) ON Semiconductor

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MUN5311DW1T1G_09 Datasheet, PDF (3/34 Pages) ON Semiconductor – Dual Bias Resistor Transistors

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MUN5311DW1T1G Series

ELECTRICAL CHARACTERISTICS

(TA = 25Â°C unless otherwise noted, common for Q1 and Q2, â minus sign for Q1 (PNP) omitted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

MUN5311DW1T1G

IEBO

MUN5312DW1T1G

MUN5313DW1T1G

MUN5314DW1T1G

MUN5315DW1T1G

MUN5316DW1T1G

MUN5330DW1T1G

MUN5331DW1T1G

MUN5332DW1T1G

MUN5333DW1T1G

MUN5334DW1T1G

MUN5335DW1T1G

100

nAdc

500

nAdc

0.5

mAdc

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)

V(BR)CEO

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

Vdc

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