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CM2009-05CP Datasheet, PDF (5/8 Pages) ON Semiconductor – VGA or DVI-I Port Companion Circuit
CM2009-05CP
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
ICC
VCC Supply Current
CONDITIONS
VCC = 5V; SYNC inputs at GND or VCC;
SYNC outputs unloaded, DDC_In and DDC_OUT
floating
VCC = 5V; SYNC inputs at 3.0V;
SYNC outputs unloaded, DDC_In and DDC_OUT
floating
VF
VIH
VIL
VHYS
VOH
VOL
ROUT
IIN
IOFF
IBACKDRIVE
VON
CIN_VID
tPLH
tPHL
tR, tF
VESD
ESD Diode Forward Voltage
IF = 10mA
Logic High Input Voltage
VCC = 5.0V; Note 2
Logic Low Input Voltage
VCC = 5.0V; Note 2
Hysteresis Voltage
VCC = 5.0V; Note 2
Logic High Output Voltage
IOH = 0mA, VCC = 5.0V; Note 2
Logic Low Output Voltage
IOL = 0mA, VCC = 5.0V; Note 2
SYNC Driver Output Resistance
VCC = 5.0V; SYNC Inputs at GND or 3.0V
Input Current
VIDEO Inputs
SYNC_IN1, SYNC_IN2 Inputs
VCC = 5.0V; VIN = VCC or GND
VCC = 5.0V; VIN = VCC or GND
Level Shifting N-MOSFET "OFF" State
Leakage Current
(LV_EN - V ) DDC_IN 0.4V; VDDC_OUT = LV_EN
(LV_EN - V ) DDC_OUT 0.4V; VDDC_IN = LV_EN
Current conducted from input pins when Vcc
V < V CC
INPUT_PIN
is powered down.
Voltage Drop Across Level-shifting
N-MOSFET when "ON"
LV_EN = 2.5V; VS = GND; IDS = 3mA
VIDEO Input Capacitance
VCC = 5.0V; VIN = 2.5V; f = 1MHz
VCC = 2.5V; VIN = 1.25V; f = 1MHz
SYNC Driver L => H Propagation Delay
CL = 50pF; VCC = 5.0V; Input tR and tF 5ns
SYNC Driver H => L Propagation Delay
CL = 50pF; VCC = 5.0V; Input tR and tF 5ns
SYNC Driver Output Rise & Fall Times
VCC = 5V
ESD Withstand Voltage
VCC = 5V; Note 3
MIN TYP MAX UNITS
1.0 mA
2.0 mA
1.1 V
2.0
V
0.55 V
450
mV
4.0
V
0.15 V
65
Ω
±10 μA
±10 μA
10 μA
10 μA
10
μA
0.18 V
3
pF
3.5 pF
12 ns
12 ns
7
ns
±8
kV
Note 1: All parameters specified over standard operating conditions unless otherwise noted.
Note 2: These parameters apply only to the SYNC drivers. Note that ROUT = RT + RBUFFER.
Note 3: Per the IEC-61000-4-2 International ESD Standard, Level 4 contact discharge method. VCC must be bypassed to GND
via a low impedance ground plane with a 0.22μF, low inductance, chip ceramic capacitor at each supply pin. ESD pulse
is applied between the applicable pins and GND. ESD pulses can be positive or negative with respect to GND.
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