CAT28F020 Datasheet, PDF (5/16 Pages) Catalyst Semiconductor – 2 Megabit CMOS Flash Memory

CAT28F020
SUPPLY CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
VCC
VCC Supply Voltage
28F020-90
4.75
28F020-12
4.5
5.5
V
5.5
V
VPPL
VPP During Read Operations
0
6.5
V
VPPH VPP During Read/Erase/Program
11.4
12.6
V
A.C. CHARACTERISTICS, Read Operation
V_CC = +5V ±10%, unless otherwise specified. (See Note 8)
JEDEC Standard
Symbol Symbol
t_AVAV
t_RC
t_ELQV
t_CE
t_AVQV
t_ACC
t_GLQV
t_OE
t_AXQX
t_GLQX
t_ELQX
t_GHQZ
tEHQZ
tWHGL(1)
t_OH
t_OLZ(1)(6)
t_LZ(1)(6)
t_DF(1)(2)
tDF(1)(2)
-
Parameter
28F020-90⁽⁷⁾
Min Typ Max
Read Cycle Time
90
CE Access Time
90
Address Access Time
90
OE Access Time
35
Output Hold from Address OE/CE Change 0
OE to Output in Low-Z
0
CE to Output in Low-Z
0
OE High to Output High-Z
30
CE High to Output High-Z
40
Write Recovery Time Before Read
6
28F020-12⁽⁷⁾
Min Typ Max
120
120
120
50
0
0
0
30
40
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Figure 1. A.C. Testing Input/Output Waveform^(3)(4)(5)
2.4 V
0.45 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
Testing Load Circuit (example)
1.3V
1N914
3.3K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
Note:
CL INCLUDES JIG CAPACITANCE
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
3. Input Rise and Fall Times (10% to 90%) < 10 ns.
4. Input Pulse Levels = 0.45 V and 2.4 V. For High Speed Input Pulse Levels 0.0 V and 3.0 V.
5. Input and Output Timing Reference = 0.8 V and 2.0 V. For High Speed Input and Output Timing Reference = 1.5 V.
6. Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
7. For load and reference points, see Fig. 1.
8. CAT28F020-90, V_CCMIN = 4.75 V.
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
5
Doc. No. MD-1029, Rev. F