CAT28F020 Datasheet, PDF (4/16 Pages) Catalyst Semiconductor – 2 Megabit CMOS Flash Memory

CAT28F020
D.C. OPERATING CHARACTERISTICS
V_CC = +5V ±10%, unless otherwise specified. (See Note 2)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
ILI
Input Leakage Current
VIN = VCC or VSS
VCC = 5.5V, OE = VIH
ILO
Output Leakage Current
VOUT = VCC or VSS,
VCC = 5.5V, OE = VIH
ISB1
VCC Standby Current CMOS CE = VCC ±0.5V,
VCC = 5.5V
ISB2
VCC Standby Current TTL
CE = VIH, VCC = 5.5V
±1
µA
±1
µA
100
µA
1
mA
ICC1
ICC2(1)
VCC Active Read Current
VCC Programming Current
VCC = 5.5V, CE = VIL,
IOUT = 0mA, f = 6 MHz
VCC = 5.5V,
Programming in Progress
30
mA
15
mA
ICC3(1)
VCC Erase Current
VCC = 5.5V,
Erasure in Progress
15
mA
ICC4(1) VCC Prog./Erase Verify Current VCC = 5.5V, Program or
Erase Verify in Progress
15
mA
IPPS
IPP1
IPP2(1)
VPP Standby Current
VPP Read Current
VPP Programming Current
VPP = VPPL
VPP = VPPH
VPP = VPPH,
Programming in Progress
±10
µA
200
µA
30
mA
I_PP3(1)
V_PP Erase Current
V_PP = V_PPH,
Erasure in Progress
30
mA
I_PP4(1) V_PP Prog./Erase Verify Current V_PP = V_PPH, Program or
Erase Verify in Progress
5
mA
V_IL
Input Low Level TTL
-0.5
0.8
V
V_ILC
Input Low Level CMOS
-0.5
V_OL
Output Low Level
I_OL = 5.8mA, V_CC(2) = 4.5V
0.8
V
0.45
V
V_IH
Input High Level TTL
2
V_CC+0.5 V
V_IHC
V_OH1
V_OH2
Input High Level CMOS
Output High Level TTL
Output High Level CMOS
V_CC*0.7
I_OH = -2.5mA, V_CC(2) = 4.5V 2.4
I_OH = -400µA, V_CC(2) = 4.5V V_CC-0.4
V_CC+0.5 V
V
V
V_ID
I_ID(1)
A₉ Signature Voltage
A₉ Signature Current
A₉ = V_ID
A₉ = V_ID
11.4
13
V
200
µA
V_LO V_CC Erase/Prog. Lockout Voltage
2.5
V
Note:
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. CAT28F020-90, V_CCMIN = 4.75 V.
Doc. No. MD-1029, Rev. F
4
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Characteristics subject to change without notice