SCYW99143 Datasheet, PDF (4/35 Pages) ON Semiconductor – Universal High Voltage Control Block

CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
SCYW99143
Figure 4. Internal Circuit Architecture (Active OFF)
Table 2. MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V_cc
V_{pad_x}
V_REM_Active OFF
Power Supply voltage, V_cc pad, continuous voltage
Voltage on all pads (except pads 8 and 10)
Voltage on all pins / pads 2 for Active Off version
−0.3 to 28
V
−0.3 to 10
V
−0.3 to 5
V
V_HV
High Voltage Pad (pad 10)
−0.3 to 500
V
R_θJ−A
T_J,max
Thermal Resistance Junction−to−Air (50 mm² x 35 mm Cu)
Maximum Junction Temperature
Storage Temperature Range
211
150
−60 to +150
°C/W
°C
°C
ESD Capability, HBM model, all pins
2
kV
ESD Capability, Machine Model
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per JEDEC standard JESD22, Method A114E
Machine Model Method 200 V per JEDEC standard JESD22, Method A115A
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
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