NSTB60BDW1T1 Datasheet, PDF (4/8 Pages) ON Semiconductor – PNP General Purpose and NPN Bias Resistor Transistor Combination

1
I_C/I_B = 10
0.1
NSTB60BDW1T1
Typical Electrical Characteristics – NPN Transistor
T_A = –40°C
25°C
85°C
1000
V_CE = 10 V
100
10
T_A = 85°C
25°C ^{–40°C}
0.01
0 10 20 30 40 50 60 70 80
I_C, COLLECTOR CURRENT (mA)
Figure 7. Maximum Collector Voltage versus
Collector Current
4
3.5
3
2.5
2
1.5
1
0.5
0
0
f = 1 MHz
I_E = 0 A
T_A = 25°C
10
20
30
40
50
60
V_R, REVERSE BIAS VOLTAGE (V)
Figure 9. Output Capacitance
100
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
T_A = 85°C
10
25°C
–40°C
1
0.1
0.01
0
V_O = 5 V
2
4
6
8
10 12 14
V_in, INPUT VOLTAGE (V)
Figure 10. Output Current versus Input
Voltage
10
25°C
T_A = –40°C
1
85°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
60
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
4