NSTB60BDW1T1 Datasheet, PDF (3/8 Pages) ON Semiconductor – PNP General Purpose and NPN Bias Resistor Transistor Combination

NSTB60BDW1T1
Typical Electrical Characteristics – PNP Transistor
2.0
1.5
V_CE = -10 V
T_A = 25°C
1.0
0.7
0.5
0.3
0.2
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I_C, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
-1.0
-0.9 ^TA ^{= 25°C}
-0.8
V_BE(sat) @ I_C/I_B = 10
-0.7
V_BE(on) @ V_CE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.1 -0.2
V_CE(sat) @ I_C/I_B = 10
-0.5 -1.0 -2.0 -5.0 -10 -20
I_C, COLLECTOR CURRENT (mAdc)
-50 -100
Figure 2. “Saturation” and “On” Voltages
400
300
200
150
V_CE = -10 V
T_A = 25°C
100
80
60
40
30
20
-0.5
-1.0 -2.0 -3.0 -5.0 -10
-20 -30 -50
I_C, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain – Bandwidth Product
10
C_ib
7.0
5.0
T_A = 25°C
3.0
C_ob
2.0
1.0
-0.4 -0.6
-1.0 -2.0 -4.0 -6.0 -10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
-20 -30 -40
1.0
0.5 V_CE = -10 V
0.3
f = 1.0 kHz
T_A = 25°C
0.1
0.05
0.03
0.01
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0
-10
I_C, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
150
140
V_CE = -10 V
f = 1.0 kHz
130
T_A = 25°C
120
110
100
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10
I_C, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
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