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NSTB60BDW1T1 Datasheet, PDF (2/8 Pages) ON Semiconductor – PNP General Purpose and NPN Bias Resistor Transistor Combination
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NSTB60BDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Q1
Collector-Base Breakdown Voltage (IC = –50 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage (IE = –50 mAdc, IE = 0)
Collector–Base Cutoff Current (VCB = –50 Vdc, IE = 0)
Emitter–Base Cutoff Current (VEB = –6.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage
(IC = –50 mAdc, IB = –5.0 mAdc) (Note 3)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
DC Current Gain (VCE = –10 V, IC = –5.0 mA) (Note 3)
hFE
Transition Frequency
fT
(VCE = –12 Vdc, IC = –2.0 mAdc, f = 100 MHz)
Output Capacitance (VCB = –12 Vdc, IE = 0 Adc, f = 1.0 MHz)
Q2
Collector-Base Breakdown Voltage (IC = 50 µA, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0) (Note 3)
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 5.0 mA) (Note 3)
COB
V(BR)CBO
V(BR)CEO
ICBO
ICEO
IEBO
VCE(sat)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (Note 3)
hFE
Output Voltage (on) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (Note 3)
VOL
Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (Note 3)
VOH
Input Resistor (Note 3)
R1
Resistor Ratio (Note 3)
R2/R1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Min
–50
–50
–6.0
–
–
–
120
–
–
50
50
–
–
–
–
80
–
4.9
15.4
1.70
Typ
–
–
–
–
–
–
–
140
3.5
–
–
–
–
–
–
–
–
–
22
2.13
Max
Unit
–
Vdc
–
Vdc
–
Vdc
–0.1
mA
–0.1
mA
–0.5
Vdc
560
–
–
MHz
–
pF
–
Vdc
–
Vdc
100
nAdc
500
nAdc
0.13
mAdc
0.25
Vdc
–
0.2
Vdc
–
Vdc
28.6
kΩ
2.55
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