NSTB60BDW1T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – PNP General Purpose and NPN Bias Resistor Transistor Combination

NSTB60BDW1T1
PNP General Purpose and
NPN Bias Resistor
Transistor Combination
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
• ESD Rating – Human Body Model: Class 1B
ESD Rating – Machine Model: Class B
MAXIMUM RATINGS
(T_A = 25°C unless otherwise noted, common for Q₁ and Q₂)
Rating
Symbol Q₁
Q₂
Collector-Emitter Voltage
V_CEO
–50
50
Collector-Base Voltage
V_CBO
–50
50
Emitter–Base Voltage
V_EBO –6.0 5.0
Collector Current – Continuous
I_C
–150 150
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
Thermal Resistance –
Junction-to-Ambient
R_θJA
670 (Note 1)
490 (Note 2)
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
Thermal Resistance –
Junction-to-Ambient
R_θJA
493 (Note 1)
325 (Note 2)
Thermal Resistance –
Junction-to-Lead
R_θJL
188 (Note 1)
208 (Note 2)
Junction and Storage Temperature
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
T_J, T_stg
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
http://onsemi.com
(3)
(2)
(1)
Q₂
Q₁
R₂
R₁
(4)
(5)
(6)
4
5
6
3
12
SOT–363
CASE 419B
STYLE 1
MARKING DIAGRAM
71^d
71 = Specific Device Code
d _{= Date Code}
ORDERING INFORMATION
Device
Package
Shipping
NSTB60BDW1T1 SOT–363 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
June, 2002 – Rev. 2
Publication Order Number:
NSTB60BDW1T1/D