NSS1C301ET4G_16 Datasheet, PDF (4/5 Pages) ON Semiconductor – NPN Transistor

NSS1C301ET4G
TYPICAL CHARACTERISTICS
1.6
1,000
T_A = 25°C
1.4
Cib
1.2
I_C = 3 A
1.0
I_C = 2 A
0.8
100
I_C = 1 A
Cob
0.6
I_C = 0.5 A
0.4
I_C = 0.1 A
0.2
0
10
0.1
1
10
100
1,000 10,000
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
V_R, REVERSE VOLTAGE (V)
Figure 8. Capacitance
1,000
100
10
V_CE = 5 V
1
0.1
100 mS
1 mS
1S
100 mS
10 mS
10
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 9. Current−Gain−Bandwidth Product
Single Pulse Test at T_A = 25°C
0.01
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
10
D = 0.5
1 _0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
R_qJC(t) = r(t) R_qJC
R_qJC = 3.8°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 11. Typical Transient Thermal Response, Junction−to−Case
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