NSS1C301ET4G_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – NPN Transistor

NSS1C301ET4G
100 V, 3.0 A, Low V_CE(sat)
NPN Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V_CE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• Complement to NSS1C300ET4G
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T_C = 25°C
Derate above 25°C
V_CBO
V_CEO
V_EB
I_C
I_CM
I_B
P_D
140
100
6.0
3.0
6.0
0.5
33
0.26
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
Total Power Dissipation (Note 1)
@ T_A = 25°C
Derate above 25°C
P_D
2.1
W
0.017
W/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
www.onsemi.com
100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW V_CE(sat) TRANSISTOR
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
1C31EG
Y
WW
1C31E
G
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Device
NSS1C301ET4G
Package
DPAK
(Pb−Free)
Shipping^†
2500/
Tape & Reel
NSV1C301ET4G
DPAK
(Pb−Free)
2500/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
March, 2016 − Rev. 5
Publication Order Number:
NSS1C301E/D