NSS1C301ET4G_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Transistor

NSS1C301ET4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
R_qJC
3.8
Thermal Resistance, Junction−to−Ambient (Note 2)
R_qJA
59.5
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = 10 mA, I_B = 0)
V_(BR)CEO
100
Collector −Base Breakdown Voltage
(I_C = 0.1 mA, I_E = 0)
V_(BR)CBO
140
Emitter −Base Breakdown Voltage
(I_E = 0.1 mA, I_C = 0)
V_(BR)EBO
6.0
Collector Cutoff Current
(V_CB = 140 V, I_E = 0)
I_CBO
−
Emitter Cutoff Current
(V_EB = 6.0 V)
I_EBO
−
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I_C = 0.1 A, V_CE = 2.0 V)
(I_C = 0.5 A, V_CE = 2.0 V)
(I_C = 1.0 A, V_CE = 2.0 V)
(I_C = 3.0 A, V_CE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(I_C = 0.1 A, I_B = 10 mA)
(I_C = 1.0 A, I_B = 0.100 A)
(I_C = 2.0 A, I_B = 0.200 A)
(I_C = 3.0 A, I_B = 0.300 A)
Base −Emitter Saturation Voltage (Note 3)
(I_C = 1.0 A, I_B = 0.1 A)
h_FE
200
200
120
80
V_CE(sat)
−
−
−
−
V_BE(sat)
−
Base −Emitter Turn−on Voltage (Note 3)
(I_C = 1.0 A, V_CE = 2.0 V)
V_BE(on)
−
Cutoff Frequency
(I_C = 500 mA, V_CE = 10 V, f = 100 MHz)
f_T
−
Input Capacitance
(V_EB = 5.0 V, f = 1.0 MHz)
Cibo
−
Output Capacitance
(V_CB = 10 V, f = 1.0 MHz)
Cobo
−
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
−
−
−
−
−
−
−
0.1
−
0.1
−
−
−
−
0.015
0.045
0.080
0.115
−
−
120
360
30
−
−
360
−
0.050
0.090
0.150
0.250
1.0
0.90
−
−
−
V
V
V
mA
mA
−
V
V
V
MHz
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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