NSS1C301ET4G_16 Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Transistor

NSS1C301ET4G
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
100
50
0
0.01
150°C
25°C
−55°C
V_CE = 2 V
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
500
450
400
350
300
250
200
150
100
50
0
0.01
150°C
25°C
−55°C
V_CE = 5 V
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
0.4
IC/IB = 10
0.3
0.2
0.1
150°C
25°C
−55°C
0
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. Collector−Emitter Saturation
Voltage
1.2
IC/IB = 10
1.0
−55°C
25°C
0.8
150°C
0.6
0.4
0.2
0
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base−Emitter Saturation Voltage
0.4
IC/IB = 50
0.3
0.2
150°C
25°C
0.1
−55°C
0
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation
Voltage
1.2
V_CE = 2 V
1.0
0.8
−55°C
25°C
0.6
150°C
0.4
0.2
0
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter “On” Voltage
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