NSS1C200MZ4 Datasheet, PDF (4/5 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) PNP Transistor

1.2
V_CE = 2 V
1.0
0.8 -55°C
0.6 ^25°C
NSS1C200MZ4
TYPICAL CHARACTERISTICS
1
2.0 A
1.0 A
0.5 A
0.1
I_C = 0.1 A
3.0 A
0.4
150°C
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 8. Base-Emitter Voltage
0.01
10
0.0001 0.001
0.01
T_J = 25°C
0.1
1
I_B, BASE CURRENT (A)
Figure 9. Collector Saturation Region
400
T_J = 25°C
f_test = 1 MHz
300
200
100
0
0
1
2
3
4
5
6
7
8
V_BE, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
120
100
T_J = 25°C
f_test = 1 MHz
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
120
100
T_J = 25°C
f_test = 1 MHz
V_CE = 10 V
80
60
40
20
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Current-Gain Bandwidth Product
10
0.5 mS
1
100 mS
1 mS
10 mS
0.1
T_J = 25°C
0.01
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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