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| NSS1C200MZ4 Datasheet, PDF (2/5 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) PNP Transistor | |||
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NSS1C200MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorÄ-ÄEmitter Breakdown Voltage (IC = -10 mAdc, IB = 0)
CollectorÄ-ÄBase Breakdown Voltage (IC = -0.1 mAdc, IE = 0)
EmitterÄ-ÄBase Breakdown Voltage (IE = -0.1 mAdc, IC = 0)
Collector Cutoff Current (VCB = -140 Vdc, IE = 0)
Emitter Cutoff Current (VEB = -6.0 Vdc)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
DC Current Gain (Note 3)
(IC = -10 mA, VCE = -2.0 V)
(IC = -500 mA, VCE = -2.0 V)
(IC = -1.0 A, VCE = -2.0 V)
(IC = -2.0 A, VCE = -2.0 V)
CollectorÄ-ÄEmitter Saturation Voltage (Note 3)
(IC = -0.1 A, IB = -0.010 A)
(IC = -0.5 A, IB = -0.050 A)
(IC = -1.0 A, IB = -0.100 A)
(IC = -2.0 A, IB = -0.200 A)
BaseÄ-ÄEmitter Saturation Voltage (Note 3)
(IC = -1.0 A, IB = -0.100 A)
BaseÄ-ÄEmitter Turn-on Voltage (Note 3)
(IC = -1.0 A, VCE = -2.0 V)
Cutoff Frequency
(IC = -100 mA, VCE = -5.0 V, f = 100 MHz)
Input Capacitance (VEB = 3.0 V, f = 1.0 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%.
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Min
-100
-140
-7.0
150
120
80
50
Typ
Max
Unit
-100
-50
Vdc
Vdc
Vdc
nAdc
nAdc
360
V
-0.040
-0.080
-0.125
-0.220
V
-0.950
V
-0.850
MHz
120
200
pF
22
pF
2.5
2.0
1.5
1.0
0.5
0
25
TYPICAL CHARACTERISTICS
TC
TA
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
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