NSS1C200MZ4 Datasheet, PDF (1/5 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) PNP Transistor

NSS1C200MZ4
100 V, 2.0 A, Low V_CE(sat)
PNP Transistor
ON Semiconductor's e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•ăThis is a Pb-Free Device
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Base Current - Continuous
Collector Current - Continuous
Collector Current - Peak
V_CEO
V_CB
V_EB
I_B
I_C
-100
Vdc
-140
Vdc
-7.0
Vdc
1.0
Adc
2.0
Adc
3.0
Total Power Dissipation
Total P_D @ T_A = 25°C (Note 1)
Total P_D @ T_A = 25°C (Note 2)
Operating and Storage Junction
Temperature Range
P_D
T_J, T_stg
W
2.0
0.8
-55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
R_qJA
°C/W
64
155
Maximum Lead Temperature for
T_L
Soldering Purposes, 1/8″ from
case for 5 seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR-4 bd material
2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR-4 bd material
©Ă Semiconductor Components Industries, LLC, 2008
1
April, 2008 - Rev. 0
http://onsemi.com
-100 VOLTS, 2.0 AMPS
PNP LOW V_CE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT-223
AYW
CASE 318E
1C200G
STYLE 1
1
A
Y
W
1C200
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb-Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
Device
Package
Shipping^†
NSS1C200T1G
SOT-223
1000/
(Pb-Free) Tape & Reel
NSS1C200T3G
SOT-223
4000/
(Pb-Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200MZ4/D