NSS1C200MZ4 Datasheet, PDF (3/5 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) PNP Transistor

500
150°C
400
NSS1C200MZ4
TYPICAL CHARACTERISTICS
V_CE = 2 V
500
150°C
400
V_CE = 4 V
300
25°C
200
-55°C
100
300
25°C
200
-55°C
100
0
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
I_C/I_B = 10
1
I_C/I_B = 20
0.1
150°C
25°C
-55°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector-Emitter Saturation Voltage
150°C
25°C
0.1
-55°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector-Emitter Saturation Voltage
1.2
I_C/I_B = 10
1.0
0.8 ^-55°C
25°C
0.6
1.2
I_C/I_B = 50
1.0
0.8 -55°C
0.6 ^25°C
0.4 _150°C
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base-Emitter Saturation Voltage
0.4
150°C
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 7. Base-Emitter Saturation Voltage
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