NSR20306NXT5G Datasheet, PDF (4/5 Pages) ON Semiconductor – 2 A, 30 V Schottky Barrier Diode

NSR20306NXT5G
TYPICAL CHARACTERISTICS
5000
500
125°C
150°C
10K
125°C
90°C
100
150°C
50
90°C
5
25°C −40°C −55°C
0
0.1
0.2
0.3
0.4
0.5
V_F, FORWARD VOLTAGE (V)
Figure 5. Forward Voltage
1
0.01
0.0001
5
25°C
−40°C
−55°C
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 6. Leakage Current
10K
0.8
0.5
1K
0.2
1.0
100
0.1
10
10K
0.8
1K
0.5
1.0
0.2
100
0.1
10
1
0.1
0 200 400 600 800 1000 1200 1400 1600 1800 2K
I_F, FORWARD CURRENT (mA)
Figure 7. Average Forward Power Dissipation
1
0.1
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 8. Average Reverse Power Dissipation
450
400
350
300
250
200
150
100
50
0
0
f = 1.0 MHz
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 9. Total Capacitance
45
40
35
30
25
20
15
10
5
Based on square wave currents
T_J = 25°C prior to surge
0
0.001 0.01 0.1
1
10
100
T_p, PULSE ON TIME (ms)
Figure 10. Forward Surge Maximum
1000
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