NSR20306NXT5G Datasheet, PDF (2/5 Pages) ON Semiconductor – 2 A, 30 V Schottky Barrier Diode

NSR20306NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
245
P_D
510
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
90
P_D
1.4
Storage Temperature Range
T_stg
−40 to +125
Junction Temperature
T_J
+150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
1000
D = 0.5
100 _0.2
0.1
0.05
10 _0.02
1 ^0.01
0.1 _{SINGLE PULSE}
0.01
0.00000001 0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
100
D = 0.5
0.2
10 ^0.1
0.05
0.02
1 ^0.01
0.1 _{SINGLE PULSE}
0.01
0.00000001 0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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