NSR20306NXT5G Datasheet, PDF (1/5 Pages) ON Semiconductor – 2 A, 30 V Schottky Barrier Diode

NSR20306NXT5G
2 A, 30 V Schottky Barrier
Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 440 mV (Typ.) @ I_F = 2 A
• Low Reverse Current − 40 mA (Typ.) @ V_R = 30 V
• 2 A of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
V_R
30
V
Forward Current (DC)
I_F
2
A
Forward Surge Current
I_FSM
A
(60 Hz @ 1 cycle)
19
Repetitive Peak Forward Current
I_FRM
3.7
A
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating:
Human Body Model ESD
>8
kV
Machine Model
> 400
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
MARKING
DIAGRAM
PIN 1
DSN2
(0603)
CASE 152AT
6RM
6R = Specific Device Code
M = Date Code
PIN CONNECTIONS
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping^†
NSR20306NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 0
Publication Order Number:
NSR20306/D