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NSR20306NXT5G Datasheet, PDF (3/5 Pages) ON Semiconductor – 2 A, 30 V Schottky Barrier Diode
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NSR20306NXT5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
mA
−
5
20
−
40
150
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 500 mA)
(IF = 1 A)
(IF = 2 A)
VF
mV
−
240
280
−
300
340
−
360
400
−
390
425
−
440
495
Total Capacitance (VR = 2.0 V, f = 1.0 MHz)
CT
−
170
−
pF
Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3)
trr
−
63
−
ns
Peak Forward Recovery Voltage (IF = 100 mA, tr = 20 ns, Figure 4)
VFRM
−
440
−
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
0.1 mF
tr
tp
t
IF
10%
trr
t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 3. Recovery Time Equivalent Test Circuit
IF
tr
VF
Time
Figure 4. Peak Forward Recover Voltage Definition
VFRM
VF
Time
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