NSR05T40P2 Datasheet, PDF (4/5 Pages) ON Semiconductor – 500 mA, 40 V Schottky Barrier Diode

NSR05T40P2
TYPICAL CHARACTERISTICS
1000
100
10
150°C
125°C
1
75°C
0.1
25°C
0.01
−25°C
0.001
−55°C
0 0.1 0.2 0.3 0.4 0.5 0.6
V_F, FORWARD VOLTAGE (V)
Figure 5. Forward Voltage
1000
150°C
100
10 ^125°C
1 _75°C
0.1
0.01 25°C
0.001
−25°C
0.0001
0.00001
0.7
0
−55°C
5 10 15 20 25 30
V_R, REVERSE VOLTAGE (V)
Figure 6. Leakage Current
35 40
1000
1.0
100
0.8
0.5
0.2
10
0.1
1
100
1.0
10
0.8
0.5
0.2
1
0.1
0.1
0.01
0.1
0 50 100 150 200 250 300 350 400 450 500
I_F, FORWARD CURRENT (mA)
Figure 7. Average Forward Power Dissipation
0.001
0 5 10 15 20 25 30 35 40
V_R, REVERSE VOLTAGE (V)
Figure 8. Average Reverse Power Dissipation
40
f = 1.0 MHz
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45
V_R, REVERSE VOLTAGE (V)
Figure 9. Total Capacitance
12
Based on square wave currents
10
T_J = 25°C prior to surge
8
6
4
2
0
0.001
0.01
0.1
1
10
100
t_P, PULSE ON TIME (ms)
Figure 10. Forward Surge Current
1000
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4