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| NSR05T40P2 Datasheet, PDF (3/5 Pages) ON Semiconductor – 500 mA, 40 V Schottky Barrier Diode | |||
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NSR05T40P2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
mA
0.2
5.0
2.0
55
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
(IF = 500 mA)
VF
mV
360
410
450
500
490
550
580
700
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
29
pF
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3)
trr
8.0
ns
Peak Forward Recovery Voltage
(IF = 100 mA, tr = 20 ns, Figure 4)
VFRM
560
mV
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
0.1 mF
tr
tp
t
IF
10%
trr
t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 3. Recovery Time Equivalent Test Circuit
IF
tr
VF
Time
Figure 4. Peak Forward Recovery Voltage Definition
VFRM
VF
Time
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