NSR05T40P2 Datasheet, PDF (2/5 Pages) ON Semiconductor – 500 mA, 40 V Schottky Barrier Diode

NSR05T40P2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
345
P_D
360
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
175
P_D
715
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
1000
D = 0.5
100 0.2
0.1
0.05
0.02
10
0.01
1 ^{SINGLE PULSE}
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
1000
D = 0.5
100
0.2
0.1
0.05
10 _0.02
0.01
SINGLE PULSE
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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