NSR05T40P2 Datasheet, PDF (1/5 Pages) ON Semiconductor – 500 mA, 40 V Schottky Barrier Diode

NSR05T40P2
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
Features
• Low Forward Voltage Drop − 580 mV (Typ.) @ I_F = 500 mA
• Low Reverse Current − 2.0 mA (Typ.) @ V_R = 40 V
• 500 mA of Continuous Forward Current
• ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
V_R
40
V
I_F
500
mA
I_FSM
3.0
A
Repetitive Peak Forward Current
I_FRM
1.0
A
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Charged Device Model
ESD
>8
kV
>1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
MARKING
2
DIAGRAM
1
SOD−923
CASE 514AA
YK MG
G
1
2
YK = Specific Device Code
M = Month Code
G = Pb−Free Package
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping†
NSR05T40P2T5G SOD−923
2 mm Pitch
(Pb−Free) 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 1
Publication Order Number:
NSR05T40P2/D