NSM6056MT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – NPN Transistor with Zener Diode

NSM6056MT1G
TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR
1.1
I_C/I_B = 10
1.0
0.9
0.8
−55°C
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 4. Base−Emitter Saturation Voltage vs.
Collector Current
1.0
V_CE = 2.0 V
0.9
0.8
−55°C
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 5. Base−Emitter Turn On Voltage vs.
Collector Current
1000
V_CE = 1.0 V
T_A = 25°C
100
10
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain−Bandwidth Product
TYPICAL ELECTRICAL CHARACTERISTICS − ZENER DIODE
1000
100
150°C
10
1.0
0.4
75°C 25°C 0°C
0.5 0.6 0.7 0.8 0.9 1.0
V_F, FORWARD VOLTAGE (V)
1.1 1.2
Figure 7. Typical Forward Voltage
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