NSM6056MT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Transistor with Zener Diode

NSM6056MT1G
NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = 1.0 mAdc, I_B = 0) V_(BR)CEO
40
Collector −Base Breakdown Voltage
(I_C = 0.1 mAdc, I_E = 0) V_(BR)CBO
60
Emitter −Base Breakdown Voltage
(I_E = 0.1 mAdc, I_C = 0) V_(BR)EBO
6.0
Base Cutoff Current
(V_CE = 35 Vdc, V_EB = 0.4 Vdc)
I_BEV
−
Collector Cutoff Current
(V_CE = 35 Vdc, V_EB = 0.4 Vdc)
I_CEX
−
ON CHARACTERISTICS (Note 3)
DC Current Gain
h_FE
(I_C = 0.1 mAdc, V_CE = 1.0 Vdc)
20
(I_C = 1.0 mAdc, V_CE = 1.0 Vdc)
40
(I_C = 10 mAdc, V_CE = 1.0 Vdc)
80
(I_C = 150 mAdc, V_CE = 1.0 Vdc)
100
(I_C = 500 mAdc, V_CE = 2.0 Vdc)
40
Collector −Emitter Saturation Voltage
V_CE(sat)
(I_C = 150 mAdc, I_B = 15 mAdc)
−
(I_C = 500 mAdc, I_B = 50 mAdc)
−
Base −Emitter Saturation Voltage
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
V_BE(sat)
0.75
−
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (I_C = 20 mAdc, V_CE = 10 Vdc, f = 100 MHz)
f_T
250
Collector−Base Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz)
C_cb
−
Emitter−Base Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
C_eb
−
Input Impedance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
h_ie
1.0
Voltage Feedback Ratio
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
h_re
0.1
Small −Signal Current Gain
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
h_fe
40
Output Admittance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
h_oe
1.0
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(V_CC = 30 Vdc, V_EB = 2.0 Vdc,
t_d
−
I_C = 150 mAdc, I_B1 = 15 mAdc)
t_r
−
Storage Time
Fall Time
(V_CC = 30 Vdc, I_C = 150 mAdc,
t_s
−
I_B1 = I_B2 = 15 mAdc)
t_f
−
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Max
Unit
−
Vdc
−
Vdc
−
Vdc
0.1
mAdc
0.1
mAdc
−
−
−
−
300
−
Vdc
0.4
0.75
Vdc
0.95
1.2
−
MHz
6.5
pF
30
pF
15
kW
8.0
X 10^{− 4}
500
−
30
mmhos
15
ns
20
225
ns
30
ZENER DIODE − ELECTRICAL CHARACTERISTICS (V_F = 0.9 Max @ I_F = 10 mA for all types)
Device
Test
Current
Izt mA
Zener Voltage VZ
Min
Max
Z_ZK I_Z
= 0.5
mA W
Max
Z_ZT
I_Z = IZT
@ 10%
Mod W
Max
Max
IR @ VR
mA
V
NSM6056MT1G
5.0
5.49
5.73
200
40
1.0 2.0
d_VZ/dt (mV/k)
@ I_ZT1 = 5 mA
Min Max
−2.0 2.5
C pF Max @
V_R = 0
f = 1 MHz
200
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