NSM6056MT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Transistor with Zener Diode

NSM6056MT1G
TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR
500
450
T_J = 150°C
400
350
25°C
300
250
200
- 55°C
150
100
50
0
0.01
V_CE = 5.0 V
V_CE = 2.0 V
V_CE = 1.0 V
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
1.2
1.0
0.8
I_C = 1.0 mA
0.6
10 mA
100 mA
300 mA
500 mA
0.4
0.2
0
0.001
0.01
0.1
1
I_B, BASE CURRENT (mA)
10
100
Figure 2. Collector Saturation Region
0.35
I_C/I_B = 10
0.30
0.25
150°C
0.20
0.15
25°C
0.10
-55°C
0.05
0
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. Collector−Emitter Saturation Voltage
vs. Collector Current
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