NSM6056MT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – NPN Transistor with Zener Diode

NSM6056MT1G
NPN Transistor with Zener
Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Driving Circuit
• Switching Applications
MAXIMUM RATINGS − NPN TRANSISTOR
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
40
V
Collector −Base Voltage
V_CBO
60
V
Emitter −Base Voltage
V_EBO
6.0
V
Collector Current − Continuous
I_C
600
mA
Collector Current − Peak
I_CM
900
mA
MAXIMUM RATINGS − ZENER DIODE
Rating
Symbol Value
Unit
Forward Voltage @ I_F = 10 mA
V_F
0.9
V
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P_D
(Note 1) @ T_A = 25°C
380
mW
Thermal Resistance from
Junction−to−Ambient
R_qJA
328
°C/W
Junction and Storage
Temperature Range
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad.
http://onsemi.com
NPN Transistor with
Zener Diode
6
5
4
Z1
Q1
1
2
3
654
1 ²³
SC−74
CASE 318F
MARKING DIAGRAM
M60MG
G
M60 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NSM6056MT1G SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
March, 2011 − Rev. 0
Publication Order Number:
NSM6056M/D