NSL35TT1 Datasheet, PDF (4/7 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Mount PNP Silicon Transistor

NSL35TT1
1.2
50
V_CE = 3.0 V
45
1
−55°C
40
0.8
25°C
35
30
0.6
T_A = 125°C
25
20
0.4
15
0.2
0
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (AMPS)
10
5
0
1
0
Figure 7. Base Emitter Turn−On Voltage vs.
Collector Current
f = 1 MHz
I_C = 0 A
T_A = 25°C
1
2
3
4
5
6
V_EB, EMITTER BASE VOLTAGE (V)
Figure 8. Input Capacitance
20
f = 1 MHz
18
I_E = 0 A
16
T_A = 25°C
14
12
10
8
6
4
2
0
0
5 10 15 20 25 30 35 40
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 9. Output Capacitance
1
D = 0.50
D = 0.20
D = 0.10
0.1 D = 0.05
D = 0.01
0.01
0.0001
SINGLE PULSE
0.001
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Copper Area = 0.048 square inches
R_θJA = 505.7 °C/W
0.01
0.1
1
10
t₁, TIME (s)
Figure 10. Normalized Thermal Response
100
1000
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