NSL35TT1 Datasheet, PDF (3/7 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Mount PNP Silicon Transistor

1
100
I_C/I_B = 200
0.1
10
0.01
50
NSL35TT1
1
I_C/I_B = 100
0.1
T_A = −55°C
25°C
125°C
0.001
0.001
T_A = 25°C
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
500
125°C
400
1
I_C/I_B = 50
T_A = −55°C
300
25°C
200
T_A = −55°C
100
V_CE = 5 V
0
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
0.1
25°C
125°C
0.01
1
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
T_A = 25°C
I_C = 1.0 A
50 mA
5.0 mA
10 mA
100 mA
500 mA
250 mA
0.0001
0.001
0.01
0.1
1
I_B, BASE CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage
vs. Base Current
1.2
1
−55°C
0.8
25°C
0.6
T_A = 125°C
0.4
0.2
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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